Electron Beam Lithography (EBL)
A fully PC controlled FE SEM intended for both – for high vacuum as well as for low vacuum operations. Outstanding optical properties, flicker-free...
The lithography (from Greek lithos-stone and grapho-write, means also “printing” a text or graphics onto a suitable material) is currently one of the most important methods for the creation of micro and nanostructures of various shapes, sizes and material composition. The method is based on the exposition of a deposited thin film to a beam. There are several lithographic methods which use different beam sources (photolithography, electron beam lithography (EBL), ion beam lithography, etc.). These methods are used according to the demands on their maximum resolution, reproducibility, speed and simplicity of the processing, acquisition costs, etc.
Electron beam lithography is a mask-less technology. The final pattern is created directly from a digital representation on computer by scanning an electron beam in the pattern across a resist-coated substrate. The exposed regions (in the case of a positive resist) or unexposed regions (in the case of a negative resist) are then selectively removed (developed). The aim is to create very small structures (nanometer scale) in the resist that can subsequently be transferred, often by etching, to the substrate material. TESCAN microscopes equipped with a powerful hardware platform which allows 50 MHz writing speed with 16-bit accuracy and a CAD like editor called DrawBeam are flexible tools for easy and fast pattern exposure. The exposure process is fully automated and parameterized. Writing strategy supports both vector objects and bitmaps with adjustable scanning angle.