GAIA3 model 2016

Extraordinary Ultra-High Resolution imaging and extremely precise nanoengineering

GAIA3 model 2016 is the ideal platform for performing the most challenging nanoengineering applications that require ultimate precision and demanding capabilities for microanalysis. Preparation of high-quality ultra-thin TEM lamellae, delayering processes in technology nodes, precise nanopatterning and high-resolution 3D reconstructions are just some of the applications in which GAIA3 excels.

These features make GAIA3 model 2016 the ideal instrument for applications in which imaging at low beam energies is a requirement to preserve delicate structures in samples that can get easily damaged by the electron beam such as low-k dielectric materials, photoresists or uncoated biological specimens. In terms of sample modification, GAIA3 model 2016 represents the most suitable solution for challenging nanomachining and nanofabrication.

Key Features

TriglavTM - newly designed Ultra-High Resolution (UHR) electron column equipped with the TriLensTM objective and an advanced detection system

  • A unique combination of a three-lens objective and crossover-free mode
  • Advanced and variable detection system for simultaneous acquisition of various signals
  • Sub-nanometre resolution: 0.7 nm at 15 keV
  • Ultimate ultra-high resolution: 1 nm at 1 keV
  • Angle-selective BSE detection for maximum topographical and elemental contrast at low energies
  • Real-time In-Flight Beam Tracing™ for performance and beam optimisation
  • Traditional TESCAN Wide Field Optics™ design offering a variety of working and display modes
  • Efficient thermal power dissipation for excellent electron column stability
  • New Schottky FE gun now enables beam currents up to 400 nA and rapid beam energy changes
  • Ideal solution for inspecting the latest technology nodes in advanced failure analysis processes
  • Ideal for imaging delicate biological specimens
  • Imaging of magnetic samples possible
  • Optimised column geometry makes analysis (SEM inspection and FIB nanomachining) of up to 8” wafers possible
  • Unique live stereoscopic imaging using 3D Beam Technology
  • User-friendly, sophisticated SW modules and automatic procedures

Cobra FIB column: High-performance Ga FIB column for ultimate precision in nanoengineering

  • Top level technology in terms of resolution for both milling and imaging
  • Cobra FIB column guarantees the shortest time to result in cross-sectioning and TEM sample preparation
  • Ultimate FIB resolution of < 2.5 nm FIB-SEM tomography for high-resolution 3D microstructural analysis
  • Ideal for 3D ultra-structural studies of biological specimens such as tissue and whole cells
  • Excellent performance at low kV ideal for polishing ultra-thin lamellae and for reducing amorphous layers

Applications

Semiconductors

  • Ultra-fine thinning of TEM lamellae to thicknesses of less than 15 nm for failure analysis in ≤ 14 nm technology nodes
  • Failure analysis in 3D integrated circuits by means of planar delayering
  • Prototyping and circuit edit in multilayered 3D integrated circuits
  • Imaging of beam-sensitive structures such as transistor layers, photoresists at low beam energies
  • Ultra-high resolution FIB-SEM tomographies for unique structural 3D microanalysis
  • In-situ analysis of TEM lamellae by means of transmitted electrons (STEM) or elemental analysis (EDX, transmission-mode EBSD) at sub-nanometre resolution
  • Inspection and analysis of 6’’, 8’’ and 12’’ wafers
  • Undistorted high resolution EBSD
  • Enables pioneering accuracy in prototyping, ion beam lithography (IBL), failure analysis of integrated circuits and thin-layer measurement
  • Milling or depositing small specific structures, benefits of combining FIB with Electron Beam Lithography (EBL)

Failure analysis in a 14 nm technology node. Ultra-thin lamella preparation: side view (Fin-cut) of lamella during thinning.

Failure analysis in a 14 nm technology node. Ultra-thin lamella preparation: side view (Fin-cut) of lamella during thinning.

Failure analysis in a 14 nm technology node. A TEM image of a lamella (Gate-cut) prepared by the inverted thinning technique which significantly reduces curtaining.

Failure analysis in a 14 nm technology node. A TEM image of a lamella (Gate-cut) prepared by the inverted thinning technique which significantly reduces curtaining.

30 keV STEM-BF image of a lamella from a 22 nm technology node.

30 keV STEM-BF image of a lamella from a 22 nm technology node.

A TEM lamella extracted from a multilayered optical disk for defect examination imaged at 30 keV with the STEM-BF detector.

A TEM lamella extracted from a multilayered optical disk for defect examination imaged at 30 keV with the STEM-BF detector.

3nm voxel-size BSE tomography of an optical coating for defect analysis.

3nm voxel-size BSE tomography of an optical coating for defect analysis.

OLED display layers quality inspection requires high magnification imaging at low energies. Underfilled layer at the top.

OLED display layers quality inspection requires high magnification imaging at low energies. Underfilled layer at the top.

OLED display layers quality inspection requires high magnification imaging at low energies. Well-filled layer.

OLED display layers quality inspection requires high magnification imaging at low energies. Well-filled layer.

Circuit editing in a multi-layer microelectronic device through metal vias deposition.

Circuit editing in a multi-layer microelectronic device through metal vias deposition.

Materials Science

  • Imaging of non-conductive materials such as ceramics, polymers, glass
  • Characterisation of nanomaterials such as nanotubes and nanorings
  • Fatigue and crack formation analysis in metals and alloys
  • Fabrication of nanostructures such as nanodisks, contacts or hall probes by means of electron beam lithography or focused ion beam induced deposition
  • Imaging of magnetic samples
  • Preparation of spintronic structures for the purposes of domain wall motion in magnetic materials and studies on magnetisation dynamics
  • Distinguishing isotopes or species with similar nominal mass by means of TOF-SIMS analysis
  • Analysis of Li-ion electrodes by means of TOF-SIMS
  • High-resolution FIB-SEM tomographies to characterise materials by means of elemental distributions, phases and crystal orientation
  • Corrosion growth studies by means of secondary ion imaging
  • TEM lamella preparation

A TEM lamella of a MgB2 sample imaged at 30 keV with the HADF R-STEM detector in the BF mode.

A TEM lamella of a MgB2 sample imaged at 30 keV with the HADF R-STEM detector in the BF mode.

GaN nanorods imaged at 800 eV with the LE-BSE detector.

GaN nanorods imaged at 800 eV with the LE-BSE detector.

FIB lithography on an Au/Si sample. The widths of the patterned lines are 58 nm and 63 nm.

FIB lithography on an Au/Si sample. The widths of the patterned lines are 58 nm and 63 nm.

Cross-section to evaluate the edge quality in a matrix of holes (diameter of 800 nm in this case) prepared by FIB. The holes were etched through a TiO2 layer on a resonant crystal substrate.

Cross-section to evaluate the edge quality in a matrix of holes (diameter of 800 nm in this case) prepared by FIB. The holes were etched through a TiO2 layer on a resonant crystal substrate.

3D reconstructions of Li-ion battery electrodes at different cycling stages.

3D reconstructions of Li-ion battery electrodes at different cycling stages.

A 3D BSE reconstruction showing the corrosion growing through Cr plating on steel.

A 3D BSE reconstruction showing the corrosion growing through Cr plating on steel.

Silicon substrate with nanocrystalline diamonds with Si vacancies (photoluminiscent centres) imaged at 2 keV. With the In-Beam SE detector to highlight the topography of the crystallographic facets.

Silicon substrate with nanocrystalline diamonds with Si vacancies (photoluminiscent centres) imaged at 2 keV. With the In-Beam SE detector to highlight the topography of the crystallographic facets.

Silicon substrate with nanocrystalline diamonds with Si vacancies (photoluminiscent centres) imaged at 2 keV. With the Mid-Angle BSE detector to distinguish between diamond and silicon and provide topographical information.

Silicon substrate with nanocrystalline diamonds with Si vacancies (photoluminiscent centres) imaged at 2 keV. With the Mid-Angle BSE detector to distinguish between diamond and silicon and provide topographical information.

Life Sciences

  • Observation of biological specimens in their uncoated state at low electron beam energies
  • High-resolution FIB tomography of highly localised zones for unique 3D structural information of specimens such as resin-embedded animal or vegetal tissue and cells
  • Preparation of thin TEM lamella of animal and plant tissue for ultrastructural sample analysis
  • In-situ TEM lamella observation at sub-nanometre resolution
  • High-resolution surface elemental analysis by means of TOF-SIMS
  • Investigation of cell morphology, development of biocompatible materials, tissue engineering, microbiology
  • Variable pressure modes and cryo-techniques for imaging delicate samples
  • Correlative light-electron microscopy
  • Cryo-FIB-SEM analysis of fully hydrated biological specimens

Mouse brain tissue stained and embedded in epoxy resin imaged at 3 keV with the LE-BSE detector.

Mouse brain tissue stained and embedded in epoxy resin imaged at 3 keV with the LE-BSE detector.

Resin-embedded barley root section imaged at uncoated at 5 keV with the LE-BSE detector.

Resin-embedded barley root section imaged at uncoated at 5 keV with the LE-BSE detector.

Cross-section in soft polymer nanofibers for their characterisation imaged at 5 keV with the In-Beam SE detector.

Cross-section in soft polymer nanofibers for their characterisation imaged at 5 keV with the In-Beam SE detector.

Lamella from a peptide imaged at 30 keV with the STEM detector in the BF mode.

Lamella from a peptide imaged at 30 keV with the STEM detector in the BF mode.

A high resolution FIB-SEM tomography of resin-embedded yeast. A volume of 10 × 10 × 10 μm<sup>3</sup> was milled with Ga FIB source at 300 pA and with a voxel size of 15 nm.

A high resolution FIB-SEM tomography of resin-embedded yeast. A volume of 10 × 10 × 10 μm3 was milled with Ga FIB source at 300 pA and with a voxel size of 15 nm.

Stained mouse liver imaged at 4 keV with the Mid-angle BSE detector which is ideal for observation of stained biological samples to explore an internal tissue structure.

Stained mouse liver imaged at 4 keV with the Mid-angle BSE detector which is ideal for observation of stained biological samples to explore an internal tissue structure.

A 3D BSE reconstruction of mouse cerebellum tissue. A volume of 6.5 × 6.6 × 5.7 μm<sup>3</sup> was milled with Ga FIB source at 300 pA and with a voxel size of 10 nm.

A 3D BSE reconstruction of mouse cerebellum tissue. A volume of 6.5 × 6.6 × 5.7 μm3 was milled with Ga FIB source at 300 pA and with a voxel size of 10 nm. .

A cross-section in a cryo-frozen leaf surface.

A cross-section in a cryo-frozen leaf surface.

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